Davis Advanced RF Technologies Lab

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» [23 May 2018] » Songjie Defended his PhD Degree
» [20 Jan 2018] » DART Lab to Advance to Phase 2 of the DARPA SPAR Program
» [07 Mar 2017] » DART Lab Awarded NSF STTR Phase II Project on Developing a Radar-based Wearable Heart Health Monitoring Device
» [08 Nov 2016] » DART Lab to Participate in DARPA SPAR program
» [24 Aug 2016] » DART Lab Awarded a Humanitarian Innovation Fund Grant on Developing Autonomous Aerial Vehicles for Unexploded Ordnance Detection
» [27 Jan 2016] » DART Lab Awarded a Catalyst Foundation Supplementary Grant on Developing an Extremely Low Power RF Wake-up Front-end

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Welcome to the Davis Advanced RF Technologies (DART) lab

Maker Fair RF-MEMS Drone RF-MEMS Prof. Liu Oscillator

We are a group of researchers with a keen interest in many exciting areas of high frequency electronics. Our research interests include:

Critical to our scientific research efforts is a pursuit of fundamental understanding of the engineering principles of high frequency electronics. A major mission of our work is to formulate and disseminate such understanding through university education as well as community outreach.


[01 Jun 2018] » High-Efficiency mmW/THz Oscillator Design - 1: Introduction

The extremely large bandwidth available at the millimeter-wave (mmW) and terahertz (THz) frequency bands has interesting potentials for a variety of applications such as high-data rate communications, high precision sensing (radar), and low-cost spectroscopy. The technology scaling of silicon integrated circuits, primarily driven by the desire to have faster and lower-power CPUs, has resulted in extremely fast transistors. For example, the maximum achievable Fmax can go well beyond 300 GHz in a 65-nm CMOS process. This naturally motivated many researchers to look at design techniques for creating silicon IC based mmW/THz systems with the hope that the cost of these systems could be significantly lowered with the massive economy of scale of silicon IC manufacturing.